Epitaxial Ferroelectric Hf _0.5 Zr _0.5 O ₂ with Metallic Pyrochlore Oxide Electrodes

Structural visualization of polarization fatigue in epitaxial ferroelectric oxide devices.

Ferroelectric oxides, such as Pb(Zr,Ti)O(3), are useful for electronic and photonic devices because of their ability to retain two stable polarization states, which can form the basis for memory and logic circuitry. Requirements for long-term operation of practical devices such as non-volatile RAM (random access memory) include consistent polarization switching over many (more than 10(12)) cycl...

Photocathodic behavior of ferroelectric Pb(Zr,Ti)O(3) films decorated with silver nanoparticles.

ITO/Pb(Zr,Ti)O(3) contacts and Ag nanoparticles were used to construct a novel ferroelectric film photocathode exhibiting a stable short-circuit photocurrent of 110 μA cm(-2) and an open-circuit voltage of 0.76 V under 100 mW cm(-2) Xe-lamp illumination and zero-bias versus SCE.

Ferroelectric tunnel junctions with graphene electrodes.

Polarization-driven resistive switching in ferroelectric tunnel junctions (FTJs)--structures composed of two electrodes separated by an ultrathin ferroelectric barrier--offers new physics and materials functionalities, as well as exciting opportunities for the next generation of non-volatile memories and logic devices. Performance of FTJs is highly sensitive to the electrical boundary condition...

Nanosecond domain wall dynamics in ferroelectric Pb(Zr, Ti)O(3) thin films.

Domain wall motion during polarization switching in ferroelectric thin films is fundamentally important and poses challenges for both experiments and modeling. We have visualized the switching of a Pb(Zr, Ti)O(3) capacitor using time-resolved x-ray microdiffraction. The structural signatures of switching include a reversal in the sign of the piezoelectric coefficient and a change in the intensi...

Ferroelectric switching in epitaxial GeTe films